Microstructual Investigation Of Polycrystalline Silicon Thin Films Re-Crystalized By Laser-Diode
PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C（2003）
摘要
We carried out the recrystallization of small-grain-size poly-Si films by means of irradiation with continuous wave (CW) laser diode light (GaAlAs: 840 nm) scanning. The CW laser light produced by the laser diode induced lateral crystallization and yielded polycrystalline silicon with grains longer than 100 mum and with widths of up to 20 mum. Electron backscattered diffraction measurement (EBSD) was performed to analyze the crystalline structures, including grain shape, size, and orientation, Our measurements revealed that the orientations of the poly-Si films were textured. The mean grain area was over 1000 mum.
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关键词
recrystallization,electron backscatter diffraction,electron diffraction,thin film,microstructures,crystallization,silicon,electrons,microstructure,texture,grain size,continuous wave,si,diffraction
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