Bipolar resistive switching performance of the nonvolatile memory cells based on (AgI)[sub 0.2](Ag[sub 2]MoO[sub 4])[sub 0.8] solid electrolyte filmsHai Tao Li,Y D Xia,X B Yan,Y Su,H X Guo,D W Yan,Bin Xu,Z G Liu,Jiming YinJournal of Applied Physics（2009）引用 27|浏览6暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
