Characteristic Properties Of Raman Scattering And Photoluminescence On Zno Crystals Doped Through Phosphorous-Ion Implantation

P-doped ZnO was fabricated by means of the ion-implantation method. At the Raman measurement, the blue shift of the E-2(high) mode and A(1)(LO) phonon of the inactive mode were observed after the P-ion implantation. It suggested to be caused by the compressive stress. Thus, Hall effect measurement indicates that the acceptor levels exists in P-doped ZnO while still maintaining n-type ZnO. From the X-ray photoelectron spectroscopy, the chemical bond formation of the P2p(3/2) spectrum consisted of 2(P2O5) molecules. Therefore, the implanted P ions were substituted to the Zn site in ZnO. From the photoluminescence (PL) spectra, P-related PL peaks were observed in the energy ranges of 3.1 and 3.5 eV, and its origin was analyzed at P-Zn-2V(Zn) complexes, acting as a shallow acceptor. With increasing temperatures, the neutral-acceptor bound-exciton emission, (A(0), X), shows a tendency to quench the intensity and extend the emission linewidth. From the relations of the intensity and the linewidth as a function of temperature, the broadening of linewidth was believed to the result that the vibration mode of E-2(high) participates in the broadening process of (A(0), X) and the change of luminescent intensity was attributed to the partial dissociation of (A(0), X). Consequently, these facts indicate that the acceptor levels existed in P-doped ZnO layer by the ion implantation. (C) 2014 AIP Publishing LLC.