Mechanism for the improvements of optical properties of 1.3µm InAs/GaAs quantum dots by a combined InAIAs/InGaAs cap layer

H Y Liu, C M Tey,I R Sellers,T J Badcock,D J Mowbray,M S Skolnick,R Beanland,M Hopkinson, A G Cullis

Journal of Applied Physics（2005）

引用 30|浏览6

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quantum dot,mass transport,scanning electron microscopy,excited states,cross section,gallium arsenide,transmission electron microscopy,room temperature

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