Morphology Alterations During Postsynthesis Oxidation Of Zn Nanowires
JOURNAL OF APPLIED PHYSICS(2009)
Abstract
Zinc metal nanowires have been oxidized at temperatures of 200-500 degrees C in ambient air in order to obtain ZnO nanowires. X-ray diffraction investigations reveal a complete transformation from Zn to ZnO at a temperature of >= 300 degrees C within 30 min. Temperature-induced grain growth attains saturation at about 350 degrees C. Scanning electron microscopy studies show a pronounced morphology change from smooth, unidirectional to rough, bursted nanorods at a temperature of >250 degrees C. The corresponding transformation mechanism is discussed.
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Key words
grain growth, II-VI semiconductors, nanofabrication, nanowires, oxidation, scanning electron microscopy, solid-state phase transformations, wide band gap semiconductors, X-ray diffraction, zinc, zinc compounds
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