Silicon Carbide Oxidation In The Presence Of Cesium: Modeling And Analysis

In this work we have focused on investigating the interaction of cesium (Cs) atom/ion with the oxidant and carbon cluster defects at the SiC/SiO(2) interface using atomistic scale computational techniques and experimental characterization methods. We observe that Cs behaves significantly different from sodium (Na) at the SiC/SiO(2) interface. Our analyses indicate that Cs tends to form a strong bond with the incoming oxygen molecule, leading to the formation of Cs oxide and suboxides. Results suggest that Cs does not reduce the penetration barrier of the impinging oxidant (O(2) molecule). Also, unlike Na, Cs is unable to increase the Fermi energy of SiC/SiO(2) interface. Finally, lateral metal-oxide-semiconductor field-effect transistors (MOSFETs) were fabricated (using Cs) yielding mobilities less than 1 cm(2)/V s versus similar to 100 cm(2)/V s fabricated using Na. (C) 2010 American Institute of Physics. [doi:10.1063/1.3493112]