Quantum Confinement And Electron Spin Resonance Characteristics In Si-Implanted Silicon Oxide Films

The nature of electron and hole trapping in silicon ion-implanted silicon oxide (SiO2) with a dose of 10(16) cm(-2) were studied using photoluminescence and electron spin resonance (ESR) measurements. We observed an ESR signal with g = 2.006 after hole and electron injections. These results unambiguously imply that the Si nanoclusters created by the high-dose Si implants are both electron and hole traps in the SiO2 films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3573482]