SrHfO(3) Films Grown on Si(100) by Plasma-Assisted Atomic Layer Deposition
Chemistry of Materials（2011）
摘要
SrHfO3 films have been synthesized by atomic layer deposition for the first time. Control of stoichiometry is achieved using an oxygen plasma source with Sr- and Hf-cyclopentadienyl based precursors. After annealing at 600 °C the crystalline phase exhibits a dielectric constant κ of 21.
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关键词
ALD,plasma-assisted,thin film and high-K dielectric
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