Growth Of Gasb And Insb Quantum Dots On Gaas (311)A By Droplet Epitaxy

T. Kawazu, T. Noda,T. Mano, M. Ohmori, Y. Akiyama,H. Sakaki

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 8, NO 2（2011）

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Abstract

We have studied the growth of GaSb quantum dots (QDs) on GaAs (311)A surfaces by droplet epitaxy. By atomic force microscopic studies, it was found that smaller and denser GaSb QDs are formed on GaAs (311)A than (100). We also tried to grow InSb QDs by droplet epitaxy. On a GaAs (100) substrate, a large ring-like structure is formed instead of a QD structure. In contrast, InSb QDs were successfully grown on a GaAs (311)A substrate. Photoluminescence properties of these QDs were also investigated. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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Key words

quantum dots,GaSb,GaAs,droplet epitaxy

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