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The (0001)A Surface Phase Diagram

V A Elyukhin

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 2（2014）

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Abstract
The (0001)A surface phase diagram of InxGa1-xN is investigated by using different approximations of the cluster variation method with the one-, two-and three-point basic clusters. The surface layer is considered in the total composition range as a binary regular solution on the triangular lattice. The miscibility gap temperature and concentration of the nearest neighbor surface atoms at this temperature are estimated as functions of the composition. The miscibility gap temperatures of In0.5Ga0.5N obtained by one-, two-and three-point cluster approximations are 710 degrees C, 535 degrees C and 370 degrees C, respectively. The strong InIn and GaGa pair clustering in comparison with InGa pair formation at temperatures higher than the miscibility gap one is demonstrated in the three-point approximation. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
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Key words
nitrides, (0001)A surface, miscibility gap, clustering
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