Visible Light Sensor Based on Metal-Oxide-Semiconductor Structure
Key Engineering Materials(2014)
Abstract
We present results for the effect of visible and UV light on the capacitance-voltage characteristics of a p-type Si based Metal-Oxide-Semiconductor ring-dot structure. It is shown that the structure can be used as a low cost sensor that is simple and easy to manufacture. The sensor can be used to measure visible and UV light intensity or as a light switch. The output signal is change of the inversion capacitance under light illumination at a given bias. The device power consumption is very low and the output signal is independent of the temperature.
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Key words
photodetector,MOS structure,UV,visible light,inversion capacitance
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