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Photoluminescence Characteristics of Ultra-Thin Silicon-on-Insulator at Low Temperatures

Yoko Sakurai,Shintaro Nomura,Kenji Shiraishi,Kenji Ohmori,Keisaku Yamada

Key Engineering Materials（2011）

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Abstract
We have investigated C-V and photoluminescence (PL) characteristics of ultra-thin silicon-on-insulator (SOD samples. Thickness dependence of a free exciton (FE) PL and an electron-hole droplet (EHD) PL has been investigated. We have found a remarkable enhancement of an EHD PL with decrease in the thickness of SOT samples.
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Photoluminescence,silicon-on-insulator
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