Simulation and physical response of negative temperature coefficient of resistance polysilicon micromachined structures

We present experimental and simulation results for polysilicon micromachined devices with a negative temperature coefficient of resistance. These were fabricated by a CMOS process with a customized sheet resistance for the second polysilicon layer. We first obtained an expression for the device resistivity, and then employed our simulation procedure to analyze both the steady-state and the time-varying response. The thermal efficiency is also examined Explicit comparisons between simulation and experimental results show excellent agreement.