Absorption and index of refraction for the modeling of InGaAsP/InP photonic devices

Methods for modeling, over an extended practical wavelength range, the index of refraction and the absorption in lattice-matched InGaAsP/InP-based photonic devices are reviewed, completed, and clarified. Carrier-induced effects on the optical properties are given special attention. For the index of refraction, the method gives results within 1% of the experimental ones. On the other hand, the results for absorption are more difficult to compare owing to the lack of experimental data.