Ultra-Low Resistance-Area-Product in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

Nagamine, Y.,Maehara, H., Tsunekawa, K., Djayaprawira, D.D.

IEEE Transactions on Magnetics（2006）

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摘要

A successful attempt in obtaining an ultra-low resistance-area-product (RA) of about 0.4 Omegamum2 with TMR ratio of about 57% at room temperature by optimizing the applied sputtering power for the MgO deposition in polycrystalline CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) was reported.

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关键词

boron alloys,cobalt alloys,iron alloys,magnesium compounds,sputter deposition,tunnelling magnetoresistance,CoFeB-MgO,applied sputtering power,magnetic tunnel junctions,ultra-low resistance-area-product,

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