Room temperature ferromagnetism and magnetoresistance in chromium-doped indium tin oxide
IEEE Transactions on Magnetics(2005)
Abstract
The possibility of room-temperature ferromagnetism in In/sub 2/O/sub 3/ thin films with bixbyite structure by Sn and Cr atom co-doping is investigated. For an n-type Cr 5 mol% film, room-temperature ferromagnetism is observed with a saturated magnetization /spl sim/0.7 emu/cm/sup 3/, remnant magnetization /spl sim/0.2 emu/cm/sup 3/, cohesive field of 28 Oe. Also, the M-T curves in magnetic field of 1 kOe for zero field cooling and field cooling for Cr 5 mol% film display the steep increase of magnetization below 30 K for decreasing temperature without abnormality as Neel temperature of antiferromagnetism and noticeable deviation indicating spin-glass behavior are present. A positive magnetoresistance is observed in the region from 5 kOe to 28 kOe for the Cr 5 mol% film. This considers the s-d exchange coupling between the conducting carrier and localized spins of Cr ions.
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Key words
temperature,transistors,thin films,curie temperature,displays,semiconductor doping,thin film,chromium,magnetic cooling,magnetization,magnetic fields,indium tin oxide,room temperature,antiferromagnetism,spin glass,ferromagnetic materials,magnetoresistance,remanence,magnetic semiconductors,neel temperature,spin glasses,magnetic field
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