From MFM Capacitors Toward Ferroelectric Transistors: Endurance and Disturb Characteristics of ${\rm HfO}_{2}$ -Based FeFET Devices

Ferroelectric Si:HfO2 has been investigated starting from metal-ferroelectric-metal (MFM) capacitors over metal-ferroelectric-insulator-semiconductor (MFIS) and finally ferroelectric field-effect-transistor (FeFET) devices. Endurance characteristics and field cycling effects recognized for the material itself are shown to also translate to highly scaled 30-nm FeFET devices. Positive-up negative-do...