Impact of Scaling on the Performance of HfO 2 -Based Ferroelectric Field Effect Transistors

The recently discovered ferroelectric behavior of HfO2-based dielectrics yields the potential to overcome the main challenges of the ferroelectric field-effect transistors (FeFETs) - CMOS compatibility as well as scalability to the state-of-the-art technology nodes of logic transistors. In this paper, we study the impact of scaling on the memory performance of FeFET devices employing Si:HfO2 ferro...