An Analytic Surface-Field-Based Quasi-Atomistic Model for Nanowire MOSFETs With Random Dopant Fluctuations

Hong Chuyang,Cheng Qi,Wang Pu,Meng Wei,Yang Libo,J B Kuo,Chen Yijian

IEEE Transactions on Electron Devices（2015）

Cited 7|Views13

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Abstract

For the first time, an analytic surface-field-based model for nanowire MOSFETs with random dopant fluctuations (RDF) is reported. In this model, the depletion charge due to the discrete dopant distribution is described by the Dirac δ functions, while the mobile charge keeps its continuous form. By introducing two new variables, the discrete 1-D Poisson's equation is transformed into a simple algeb...

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Key words

Mathematical model,Semiconductor process modeling,Semiconductor device modeling,Doping,MOSFET,Poisson equations,Subthreshold current

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