An Analytic Surface-Field-Based Quasi-Atomistic Model for Nanowire MOSFETs With Random Dopant Fluctuations
IEEE Transactions on Electron Devices(2015)
Abstract
For the first time, an analytic surface-field-based model for nanowire MOSFETs with random dopant fluctuations (RDF) is reported. In this model, the depletion charge due to the discrete dopant distribution is described by the Dirac δ functions, while the mobile charge keeps its continuous form. By introducing two new variables, the discrete 1-D Poisson's equation is transformed into a simple algeb...
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Key words
Mathematical model,Semiconductor process modeling,Semiconductor device modeling,Doping,MOSFET,Poisson equations,Subthreshold current
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