Resistive switching behavior of photochemical activation solution-processed thin films at low temperatures for flexible memristor applications

This study explores deep ultraviolet photochemically activated solution-processed metal-oxide thin films at room temperature for fabrication of flexible memristor active resistive layers. An annealing treatment was not required during the process. Solution processed undoped and Mn-doped ZnO thin films served as active layers in the resistive random access memory structure, prepared at 145 degrees C. The carrier transports in high and low electrical fields were dominated by Frenkel-Poole emission and thermionic emission, respectively. The trap energy level, which originated primarily from V-o or the singly charged oxygen vacancy, was calculated at 0.49 eV. A flexible structure consisting of Ag/DUV-ZnO/indium tin oxide/polyethylene terephthalate was fabricated successfully and its mechanical performance was investigated.