Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures Silicon-germanium interdiffusion in strained Ge/SiGe multiple quantum well structures

The corresponding author, Xue-Chao Liu, would like to apologize for the omission of some of the contributing authors from this published paper. The full list of contributing authors should read: Xue-Chao Liu, R J H Morris, M Myronov, A Dobbie and D R Leadley Dr R J H Morris contributed the secondary ion mass spectrometry measurement and analysis, shown in figure 2. Drs M Myronov and A Dobbie contributed by growing the samples.