Charge and efficient spin-valley polarization conductances in ferromagnetic silicene

We investigate the transport properities of electrons in silicene junction composed of normal silicene and ferromagnetic silicene. We analyze the charge conductance gc as a function of length of normal region, the net electrostatic potential difference and the barrier potential, these results show this junction is a potential candidate to realize electric-field-controlled switching. In particular, the perfect spin and valley polarized conductance can be achieved by adjusting the barrier potential. Moreover, the efficiency of the spin and valley polarization is improved significantly in this junction, capable of achieving a 100% spin polarized spintronics and > 90% valley polarized valleytronics. Our findings will benefit applications in silicene-based high performance spintronics and valleytronics.