Recrystallization of silicon-on-sapphire structures at various amorphization-ion-beam energies
Semiconductors(2013)
Abstract
Silicon films on sapphire substrates are grown via recrystallization from the silicon-sapphire interface. An amorphous layer is formed using ion implantation with silicon ion energies of 90–150 keV. An X-ray rocking curve is used to estimate the crystalline perfection of the silicon films. After recrystallization, the silicon layer consists of two parts with different crystalline quality. The recrystallized silicon-on-sapphire structures have a highly perfect upper layer (for fabricating microelectronic devices) and a lower layer adjacent to the sapphire substrate containing a large number of defects.
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Key words
Epitaxial Layer,Sapphire Substrate,Silicon Layer,Epitaxial Film,Silicon Film
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