Characterization of Moderately Damped Low Tc Josephsonjunctions through Measurements of Switching Current Distributions

We report on measurements of the switching current probability both in the thermal and quantum regime on moderately damped NbN/MgO/NbN Josephson junctions with very low critical current density (’ 2A/cm2). We observed three distinct regimes: below 90 mK the width of the switching distributions is constant within the experimental error, while from 90 mK to 1.6K the width increases with temperature, this change of behavior signaling the standard transition from macroscopic quantum tunneling (MQT) to thermal activation (TA) regime respectively. Above 1.6K we find effects of anti-correlation between the bath temperature and thermal fluctuations since the width of the histograms starts to collapse, and indications of a transition to a third regime called Phase Diffusion (PD) are evident, such as the change of the switching distributions symmetry. Experimental data have been analyzed through numerical fitting of the switching probability and Monte Carlo simulations, and we found a good agreement with theoretical expectations based on multiple re-trapping processes, which strongly depend on the junction damping. The parameters which completely characterize the dynamics of such moderately damped Josephson junctions have been also extracted.