Epitaxial Growth of LZO Film on NiW Substrate

La2Zr2O7 (LZO) oxide film is a good choose for buffer layer of coated conductors, especially for Chemical Solution Deposition route to fabricate coated conductors. In this paper, the influences of process parameters on texture of LZO films deposited by chemical solution deposition process on NiW substrate were studied, and results indicated that the heat-treatment temperature, dwell time and the oxygen content in the heat-treatment atmosphere were important to obtain a cube textured LZO film on NiW substrate. Based on our results, it was believed that inhibition of crystallite growth of LZO grains on the top layer of LZO film was the key to understand the epitaxial growth of LZO film on NiW substrate.