Modeling the threshold voltage of PNIN SSOI tunnel field-effect transistor

AbstractIn this paper, a physically based analytical threshold voltage model for PNIN strained-silicon-on-insulator tunnel field-effect transistor PNIN SSOI TFET is proposed by solving the two-dimensional 2D Poisson equation in narrow N+ layer and intrinsic region. In the proposed model, the effect of strain in terms of equivalent Ge mole fraction, narrow N+ layer and gate dielectric, and so on, is being considered. The validity of the proposed model is verified by comparing the model results with 2D device simulation results. It is demonstrated that the proposed model can correctly predicts the trends in threshold voltage with varying the device parameters. This proposed model can be effectively used to design, simulate, and fabricate the PNIN SSOI TFETs with the desired performance. Copyright © 2015 John Wiley & Sons, Ltd.