71% PAE C-band GaN power amplifier using harmonic tuning technology

Xiaohua Ma,Mengyi Cao,Bochao Zhao,Yang Lu,Jiaxing Wei,Yue Hao

Electronics Letters（2014）

引用 8|浏览5

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摘要

A high-efficiency C-band internally matched power amplifier, developed with 12 mm AlGaN/GaN high-electron mobility transistors is described. The second-harmonic frequency (2f0) tuning network is applied to confine the impedance at 2f0 in safe efficiency regions. The packaged power amplifier achieves 71% power-added efficiency (PAE) and 102 W output power, associated with 17 dB power gain. The PAE ...

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关键词

aluminium compounds,gallium compounds,high electron mobility transistors,III-V semiconductors,power amplifiers,wide band gap semiconductors

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