Photoluminescence decay properties of Si-rich-oxide/SiO 2 multilayer films with different Si-quantum dots densities

Superlattices and Microstructures（2014）

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摘要

•The size and density of Si-QDs are adjusted by radio-frequency power.•Different PL decay models are used to describe the carrier recombination processes in Si-QDs.•Localized state transition in Si clusters is confirmed by low temperature PL spectra.

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关键词

Si quantum dots,Time-resolved photoluminescence,Quantum confinement effect

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