Kondo Semiconductors As A Novel Thermoelectric-Cooling Material
TWENTIETH INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS(2001)
摘要
Among rare-earth-based compounds showing the Kondo effect, systems exhibiting a small energy gap in the heavy-electron band are referred to as Kondo semiconductors. We have measured thermoelectric properties of CeNiSn, CeRhSb, CeRhAs, YbB12 and their substituted alloys. The thermopower of CeRhAs has a positive maximum of 130 muV/K at 40 K, while that of YbB12 has a negative peak of -150 muV/K at 10 K. For both CeNiSn and CeRhSb, the electrical resistivity is less than 200 muOmegacm and the thermal conductivity is about 50 mW/Kcm at 60 K. The figure of merit Z for CeRhAs and CeRhSb has the maximum value of 1.0x10(-3)/K at 125 K and 2.2x10(-3)/K at 13 K, respectively, Therefore, these compounds have high potential for a novel thermoelectric cooling material at low temperatures.
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关键词
electrons,figure of merit,density of states,electric resistance,thermopower,electrical resistance,kondo semiconductors,thermal conductivity,thermoelectricity,kondo effect,temperature,thermoelectric power,electrical resistivity,energy gap
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