Characterization of Ni/i-AlGaN/GaN Schottky Samples Fabricated after H_3PO_4-Etching(Session9B: GaN and SiC Device Process Technology)

Takayuki Sawada, Yuta Kaizuka, Kensuke Takahashi,Kazuaki Imai

siam international conference on data mining(2008)

Cited 23|Views1
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Key words
schottky,wet etching
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