Integrated RF Front-End in 0.13 μm CMOS for Automotive and Industrial Applications beyond 20 GHz

M Berry,Christoph Kienmayer, R Thuringer,Werner Simburger,Wolfgang Menzel

Proceedings of the European Solid-State Circuits Conference（2006）

引用 0|浏览1

暂无评分

摘要

An integrated front-end, for automotive and industrial applications beyond 20 GHz, in 0.13 mu m standard CMOS is presented. The front-end chip includes a low noise amplifier, a transformer-based Gilbert-mixer, an intermediate frequency amplifier and a buffer for the local oscillator input. The differential front-end at 22.5 GHz, measured on test-board, achieves a gain of 25.8dB, a SSB noise figure of 6.8 dB; an input IP3 of -34.6 dBm and an input 1 dB compression point of -41.5 dBm while consuming 112.5 mW at a power supply voltage of 1.5 V.

查看译文

关键词

integrated circuit design,local oscillator,chip,noise figure,buffer,front end,intermediate frequency,cmos,low noise amplifier,cmos integrated circuits

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要