Modeling Isolation-Induced Mechanical Stress Effect on SOI MOS Devices

KW Su,KH Chen,TX Chung,HW Chen,CC Huang,HY Chen,CY Chang,DH Lee,CK Wen,YM Sheu, SJ Yang, CS Chiang,FL Yang,YT Chia

2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS（2003）

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摘要

In this paper, the mechanical stress effect of SOI MOS devices was analysed. The width dependence of stress effect and drain current shift were evaluated.

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关键词

MIS devices,MOSFET,elemental semiconductors,semiconductor device models,silicon-on-insulator,stress effects,SOI MOS devices,Si,drain current shift,modeling isolation-induced mechanical stress effect

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