A 2danalytical Model Of The Channel Potential And Threshold Voltage Of Double-Gate (Dg) Mosfets With Vertical Gaussian Doping Profile

Pramod Kumar Tiwari,Surendra Kumar, S Mittal,V P Srivastava, U B Pandey, S Jit

2009 INTERNATIONAL CONFERENCE ON MULTIMEDIA, SIGNAL PROCESSING AND COMMUNICATION TECHNOLOGIES（2009）

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摘要

The paper presents a 2D analytical model for the potential function and threshold voltage of symmetric Double-Gate (DG) MOSFETs with vertical Gaussian doping profile in the channel.

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关键词

boundary conditions,logic gates,microelectronics,threshold voltage,doping,electric potential,semiconductor doping

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