Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution

IEEE Transactions on Electron Devices(2016)

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Abstract
This paper exploits the possibility of monitoring the floating-gate (FG) charge of state-of-the-art NAND Flash arrays with a single-electron resolution to investigate in detail the program operation and some previously inaccessible technological parameters. In particular, the analysis leads to the assessment of the statistical distribution of the FG to control-gate capacitance and of the leakage c...
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Key words
Programming,Quantization (signal),Flash memories,Capacitance,Logic gates,Dielectrics,Electron traps
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