Memory Devices: In Situ Tuning of Switching Window in a Gate-Controlled Bilayer Graphene-Electrode Resistive Memory Device (Adv. Mater. 47/2015).

Tian He,Zhao Haiming,Wang Xue-Feng,Xie Qian-Yi,Chen Hong-Yu,Mohammad Mohammad Ali,Li Cheng,Mi Wen-Tian,Bie Zhi,Yeh Chao-Hui,Yang Yi, Wong H-S Philip,Chiu Po-Wen,Ren Tian-Ling

Advanced materials (Deerfield Beach, Fla.)（2015）

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摘要

On page 7767, H.-S. P. Wong, P.-W. Chiu, T.-L. Ren, and co-workers demonstrate a resistive random access memory (RRAM) device with a tunable switching window. The SET voltage can be continuously tuned over a wide range by electrical gating. The gate-controlled bilayer graphene-electrode RRAM can function as 1D1R to potentially increase the RRAM density.

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关键词

bilayer graphene,gate controlled,in situ,resistive memory,switching windows

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