Advances in InP HEMT WR1.5 Amplifier MMICs
Compound Semiconductor Integrated Circuit Symposium(2015)
Abstract
We show on-wafer measured data for four amplifier designs targeting the WR1.5 band. One design shows gain exceeding 20 dB over the entire WR1.5 bandwidth. We show the maturation of the InP HEMT process, and show that now fewer gain stages are necessary to achieve comparable gain numbers reported in past publications. We also show that gain is achievable with larger device peripheries. These larger periphery devices should ultimately allow for greater saturated output power levels, though this is not confirmed at the time of this writing.
MoreTranslated text
Key words
III-V semiconductors,MMIC amplifiers,high electron mobility transistors,indium compounds,InP,InP HEMT WR1.5 amplifier MMIC,WR1.5 band,comparable gain numbers,device peripheries,four amplifier designs,on-wafer measured data
AI Read Science
Must-Reading Tree
Example
Generate MRT to find the research sequence of this paper
Chat Paper
Summary is being generated by the instructions you defined