Tunneling spectroscopy of p-type doping in silicon from boron-containing molecular monolayer

Scanning tunneling spectroscopy was used to investigate surface doping in silicon, based on the grafting of a boron-containing molecular layer and the subsequent thermal diffusion of boron into silicon. Curve fitting of the experimental I(V) characteristics with a planar computation of the tunnel current yields a dopant concentration that is consistent with secondary ion mass spectrometry analyses in the subsurface region. Additional two-point probe electrical measurements performed at variable tip separations indicate a bulk-like transport, that corresponds to a significant diffusion of the boron impurities below the surface of low doped n-type Si wafers. Such results show the interest of multiple-probe scanning tunneling microscopy as a non-invasive technique to determine the electrically active content of doped layers during the fabrication of advanced integrated circuits. Display Omitted Boron-doping of silicon from molecular monolayer dopingTunneling spectroscopy analysis of the surfaceSurface doping from correlation with numerical simulations