A Class-E Tuned W-Band SiGe Power Amplifier With 40.4% Power-Added Efficiency at 93 GHz

Peter Song,Michael A. Oakley,A. Çağrı Ulusoy,Mehmet Kaynak,Bernd Tillack, Gregory A. Sadowy,John D. Cressler

IEEE Microwave and Wireless Components Letters（2015）

Cited 25|Views20

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Abstract

A W-band power amplifier with Class-E tuning in a 0.13 μm SiGe BiCMOS technology is presented. Voltage swing beyond BVCBO is enabled by the cascode topology, low upper base resistance, and minimally overlapping current-voltage waveforms. At 93 GHz with 4.0 V bias, the peak power-added efficiency and saturated output power are measured to be 40.4% and 17.7 dBm, respectively. With the bias increased...

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Key words

Silicon germanium,Gain,Power generation,Current measurement,Power measurement,Tuning,Switches

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