A high-speed, high-gain OTA structure with a new compensation technique

Mohammad Najjarzadegan,Armin Jalili,Rasoul Dehghani

Electrical Engineering（2015）

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摘要

In this paper a high-speed, high-gain operational transconductance amplifier (OTA) is designed and simulated in a 180-nm CMOS technology. The gain-boosting technique is employed in a two-stage OTA structure and a new compensation approach is developed. Using booster in the two stage OTA increases the open-loop DC gain while using the proposed compensation technique guarantees the stability of the structure. Moreover, using the simplifications made in the small signal analysis in this work provides an effective strategy in analyzing more complex circuit structures. In this case, an OTA with an open-loop DC gain of about 114 dB, unity gain bandwidth of about 305 MHz, phase margin of 61° and power consumption of 4.3 mW with a loading capacitor of 5 pF is designed and simulated.

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关键词

CMOS analogue integrated circuits,compensation,integrated circuit design,integrated circuit modelling,operational amplifiers,CMOS technology,capacitance 5 pF,circuit structures,compensation technique,gain-boosting technique,high-speed high-gain operational transconductance amplifier,loading capacitor,open-loop DC gain,phase margin,power 4.3 mW,power consumption,size 180 nm,small signal analysis,two-stage OTA structure,unity gain bandwidth,Gain boosting,Miller compensation,hybrid cascode compensation,two stage OTA

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