A 1–1.2 GHz RF MEMS VCO with accurate noise characterization

Microwave Symposium(2015)

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摘要
This paper presents the first RF MEMS VCO at 1–1.2 GHz with no measured mechanical resonances in its close-in frequency response. The oscillator results in output power of 2.5–4.5 dBm at 1–1.2 GHz and a best phase noise of −152 dBc/Hz at 10 MHz offset. A low-level spurious is seen at 131 kHz and its harmonics of 262 kHz due to the internal charge pump. The application areas are in high performance 0.5–3 GHz oscillators requiring varactor Q of 100–200.
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关键词
RF MEMS,VCO,charge pump,noise,voltage leakage
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