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Raman Spectroscopy Studies Of Dopant Activation And Free Electron Density Of In0.53ga0.47as Via Sulfur Monolayer Doping

Kenneth R Kort,P Y Hung,Patrick D Lysaght,Wei-Yip Loh,Gennadi Bersuker,Sarbajit Banerjee

PHYSICAL CHEMISTRY CHEMICAL PHYSICS（2014）

Cited 13|Views9
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Abstract
We present a Raman spectroscopy study of electron-phonon coupling in In0.53Ga0.47As epilayers doped via the sulfur-monolayer doping method. A high-frequency coupled mode (HFCM) detected above 400 cm(-1) shifts with increasing charge carrier density and allows for extraction of the activated dopant concentrations.
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Key words
dopant activation,free electron density,raman,sulfur,spectroscopy
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