Bandgap tunability in Zn(Sn,Ge)N(2) semiconductor alloys.

Prineha Narang,Shiyou Chen,Naomi C Coronel,Sheraz Gul,Junko Yano,Lin-Wang Wang,Nathan S Lewis,Harry A Atwater

Advanced materials (Deerfield Beach, Fla.)（2013）

Cited 85|Views7

No score

Abstract

ZnSn1-x Gex N2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2 ) to 3.1 eV (ZnGeN2 ) by control of the Sn/Ge ratio.

Translated text

AI Read Science

Must-Reading Tree

Example

Generate MRT to find the research sequence of this paper

Chat Paper

Summary is being generated by the instructions you defined