Device scaling physics and channel velocities in AIGaN/GaN HFETs: velocities and effective gate length
Electron Devices, IEEE Transactions（2006）
摘要
This paper addresses scaling issues in AIGaN/GaN heterojunction field-effect transistors (HFETs) using ensemble Monte Carlo techniques. For gate lengths below 0.25 μm, fT values are known not to scale linearly with the inverse gate length. The authors' simulations show this to be due to an increasing difference between the lithographic gate length and the effective gate length as the devices shrink. The results for AIGaN/GaN are compared with In0.52Al0.48-In0.53Ga0.47As-InP devices, and the authors found that the limiting role of velocity overshoot and depletion region spread causes the GaN HFETs to have a peak fT of ∼ 220 GHz compared to ∼ 500 GHz for InGaAs devices.
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关键词
indium compounds,ingaas devices,depletion region spread,wide band gap semiconductors,channel velocities,effective gate length,iii-v nitrides,in0.52al0.48-in0.53ga0.47as-inp,device scaling physics,gallium arsenide,scaling,velocity overshoot,lithographic gate length,algan-gan,recessed gate,gallium compounds,monte carlo technique,iii-v semiconductors,ingaas,gan,heterojunction field-effect transistors (hfets),heterojunction field-effect transistors,monte carlo methods,algan,high electron mobility transistors,inp,aluminium compounds,heterojunctions,physics,field effect transistor,optical scattering
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