Surface Dipole Layer Potential Induced IR Absorption Enhancement in N-Alkanethiol SAMs on GaAs(001)

The work function of n-alkanethiol self-assembled monolayers (SAMs) prepared on the GaAs(001) surface was measured using the Kelvin probe technique yielding the SAM 2D dipole layer potential (DLP). Direct n-dependent proportionality between the DLP values and the C-H stretching mode infrared (IR) absorption intensities was observed, which supports a correspondence of reported IR enhancements with the electrostatic properties of the interface. X-ray photoelectron spectroscopy is also used to verify the work function measurements. In addition, the principal components of the refractive index tensor are shown to be n-invariant in the ordered SAM phase. Our results suggest that a local field correction to the transition dipole moment accounts for the observed increase in IR activity through an increase to the electronic polarizability.