GaNAs/GaAsSb type II active regions for 1.3-1.5 /spl mu/m operation

Hyunsoo Yang,Lordi, Vincenzo, Harris, James S.

CLEO). Conference（2004）

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摘要

We investigated a new active material consisting of GaNAs/GaAsSb type II quantum wells on GaAs for 1.3-1.5 /spl mu/m wavelength operation. Absorption spectra of two samples with different compositions were measured, showing good agreement with simulation.

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关键词

III-V semiconductors,gallium arsenide,gallium compounds,infrared spectra,optical materials,quantum well lasers,semiconductor quantum wells,1.3 to 1.5 mum,GaNAs-GaAsSb,GaNAs/GaAsSb type II quantum wells,absorption spectra,

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