Self-Consistent Analysis of Strain-Compensated InGaN–AlGaN Quantum Wells for Lasers and Light-Emitting Diodes

IEEE Journal of Quantum Electronics(2009)

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摘要
Strain-compensated InGaN-AlGaN quantum wells (QW) are investigated as improved active regions for lasers and light emitting diodes. The strain-compensated QW structure consists of thin tensile-strained AlGaN barriers surrounding the InGaN QW. The band structure was calculated by using a self-consistent 6-band kmiddotp formalism, taking into account valence band mixing, strain effect, spontaneous a...
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关键词
Quantum well lasers,Light emitting diodes,Spontaneous emission,Aluminum gallium nitride,Tensile strain,Piezoelectric polarization,Indium,Stimulated emission,Optical mixing,Threshold current
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