Confined Excitons In Semiconductors - Correlation Between Binding-Energy And Spectral Absorption Shape

PHYSICAL REVIEW B(1995)

引用 63|浏览4
暂无评分
摘要
We calculate excitonic absorption spectra in several types of semiconductor nanostructures by using an original formalism involving fractional-dimensional spaces. This compact, analytical formulation predicts a surprising one-to-one mapping between the enhanced exciton Rydberg and the shape of the spectrum, whatever the physical origin of the confinement. by all-numerical calculation of the optical susceptibility we check that different systems with identical exciton Rydbergs exhibit nearly identical spectra, strikingly close to those given by the fractional-dimensional approach.
更多
查看译文
关键词
thin film,binding energy
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要