Technology Scaling Comparison of Flip-Flop Heavy-Ion Single-Event Upset Cross Sections

Heavy-ion experimental results from flip-flops in 180-nm to 28-nm bulk technologies are used to quantify single-event upset trends. The results show that as technologies scale, D flip-flop single-event upset cross sections decrease while redundant storage node flip-flops cross sections may stay the same or increase depending on the layout spacing of storage nodes. As technology feature sizes becom...