Radiation effects in elements of submicron CMOS integrated circuits with various kinds of isolation

Yu V Bogatyrev,S B Lastovskiy,F P Korshunov,V I Kulgachev, A S Turtsevich,S V Shwedov, V S Malyshev, A M Yarmolik

Microwave and Telecommunication Technology（2013）

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摘要

The results of experimental researches of radiation resistance of element base of 0.35 μm CMOS integrated circuits under influence of Co60 gamma-irradiation are submitted. The comparative analysis of influence of various kinds of isolation of CMOS IC' elements (LOCOS and Shallow Trench Isolation - STI) on radiation variation of MOS transistors' parameters is carried out.

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关键词

cmos integrated circuits,mosfet,cobalt,radiation effects,cmos ic element isolation,co60,locos,mos transistor parameters,sti,gamma-irradiation,radiation resistance,shallow trench isolation,size 0.35 mum,submicron cmos integrated circuits

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