Quantum confinement point of view for mobility and stress responses on (100) and (110) SingleGate and double-gate nMOSFETs

Anson Cc Wang,Edward Chen,Tzermin Shen,Jeff Wu,Carlos H Diaz

Simulation of Semiconductor Processes and Devices（2013）

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摘要

Impact of quantum confinement on electron mobility and its stress responses for (100) and (110)-orientated single-gate (SG) and double-gate (DG) nMOSFETs is studied. Unstrained electron mobility in (110) DG nMOSFETs is found to be significantly higher than that of (110) SG devices. This paper discusses another physical explanation to the experimentally observed higher electron mobility in (110) FinFET sidewall channels as compared to that observed in planar (110) devices. It is also found that the electron mobility increases faster under uniaxial tensile stress for (110) devices than for (100) ones. The higher mobility in (110) DG devices is attributed to the lighter confinement effective mass of Δ4 valleys and the non-parabolicity of Δ2 valleys along the <;110> directions. With high enough tensile strain, DG nMOSFETs with (110) surface orientation are expected to outperform these on (100).

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关键词

mosfet,electron mobility,dg devices,finfet sidewall channels,double-gate nmosfet,mobility reponse,planar devices,quantum confinement,single-gate nmosfet,stress response,surface orientation,tensile strain,uniaxial tensile stress,unstrained electron mobility,mobility,single-gate and double-gate nmosfets

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